The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Feb. 28, 2018
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Risako Ueno, Fujimino, JP;

Kazuhiro Suzuki, Meguro, JP;

Yuki Nobusa, Yokohama, JP;

Jiro Yoshida, Kawasaki, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 17/88 (2006.01); H01L 31/14 (2006.01); H01L 31/18 (2006.01); G01S 7/481 (2006.01); H01L 31/107 (2006.01); G01S 7/486 (2020.01);
U.S. Cl.
CPC ...
H01L 31/145 (2013.01); G01S 7/4816 (2013.01); G01S 17/88 (2013.01); H01L 31/107 (2013.01); H01L 31/18 (2013.01); G01S 7/4868 (2013.01);
Abstract

A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.


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