The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Apr. 01, 2019
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventor:
Yusuke Fukuchi, Yokohama, JP;
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01); H01L 31/02 (2006.01); H01L 27/146 (2006.01); B60R 11/04 (2006.01); G01S 7/4861 (2020.01); G01S 17/10 (2020.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); B60R 11/04 (2013.01); G01S 7/4861 (2013.01); G01S 17/10 (2013.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14645 (2013.01); H01L 31/02027 (2013.01);
Abstract
Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.