The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Mar. 16, 2020
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jianhua Du, Beijing, CN;

Chao Li, Beijing, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/032 (2006.01); H01L 31/0216 (2014.01); H01L 31/0272 (2006.01); H01L 31/20 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0322 (2013.01); H01L 31/0272 (2013.01); H01L 31/02161 (2013.01); H01L 31/0352 (2013.01); H01L 31/20 (2013.01);
Abstract

The embodiment of the application discloses a photoelectric sensor and a manufacturing method thereof, wherein the photoelectric sensor comprises: a light absorbing layer for absorbing incident light to generate a photocurrent, the light absorption layer comprises a first absorption layer and a second absorption layer stacked in the direction of incident light, the first absorption layer being an intrinsic semiconductor layer of the photoelectric sensor, the second absorption layer being made of a material having a higher photoelectric conversion efficiency than the first absorption layer, and the second absorption layer has a stripe structure arranged at intervals.


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