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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11189709 B1

PDFFull Text
Date of Patent:
Nov. 30, 2021

Filed:

Aug. 15, 2019

Semiconductor device and method for manufacturing semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Yuki Nakano, Kyoto, JP;

Ryota Nakamura, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Jay C Kim

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/12 (2006.01); H01L 29/16 (2006.01); H01L 29/417 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/0465 (2013.01); H01L 21/0475 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/0869 (2013.01); H01L 29/1045 (2013.01); H01L 29/1095 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/407 (2013.01); H01L 29/41766 (2013.01); H01L 29/7813 (2013.01); H01L 21/047 (2013.01);
Abstract

A semiconductor device of the present invention includes a semiconductor layer, a gate trench that defines a source region of a first conductivity type in the semiconductor layer, a channel region of a second conductivity type of a lower part of the source region, a source trench that passes through the source region and the channel region, an impurity region of the second conductivity type of a bottom part and a side part of the source trench, a source electrode on the semiconductor layer, and a highly-concentrated impurity region of the second conductivity type, the highly-concentrated impurity region having a contact portion connected to the source electrode at a surface of the semiconductor layer, the highly-concentrated impurity region passing through the source region and extending to a position deeper than the source region, the highly-concentrated impurity region having a concentration higher than the impurity region.

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