The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Mar. 19, 2020
Rohm Co., Ltd., Kyoto, JP;
Masaki Nagata, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes a semiconductor layer that has a first surface and a second surface, a trench that is formed at the first surface of the semiconductor layer and that extends in a first direction, an element portion that has a first-conductivity-type first region, a second-conductivity-type second region, and a third-conductivity-type third region that are formed in order along a depth direction of the trench from the first surface of the semiconductor layer, a gate insulating film formed at an inner surface of the trench, and a gate electrode that is embedded in the trench and that faces the first region, the second region, and the third region through the gate insulating film.