The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Jan. 30, 2019
Siliconix Incorporated, San Jose, CA (US);
M. Ayman Shibib, San Jose, CA (US);
Misbah Azam, San Jose, CA (US);
Chanho Park, San Jose, CA (US);
Kyle Terrill, San Jose, CA (US);
Vishay Siliconix, LLC, San Jose, CA (US);
Abstract
Split gate semiconductor with non-uniform trench oxide. A metal oxide semiconductor field effect transistor (MOSFET) comprises a plurality of parallel trenches. Each such trench comprises a first electrode coupled to a gate terminal of the MOSFET and a second electrode, physically and electrically isolated from the first electrode. The second electrode is beneath the first electrode in the trench. The second electrode includes at least two different widths at different depths below a primary surface of the MOSFET. The trenches may be formed in an epitaxial layer. The epitaxial layer may have a non-uniform doping profile with respect to depth below a primary surface of the MOSFET. The second electrode may be electrically coupled to a source terminal of the MOSFET.