The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
May. 31, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
The University of Chicago, Chicago, IL (US);
Center for Technology Licensing AT Cornell University, Ithaca, NY (US);
Minhyun Lee, Suwon-si, KR;
Jiwoong Park, Chicago, IL (US);
Saien Xie, Ithaca, NY (US);
Jinseong Heo, Seoul, KR;
Hyeonjin Shin, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Center for Technology Licensing at Cornell University, Ithaca, NY (US);
The University of Chicago, Chicago, IL (US);
Abstract
Provided are a superlattice structure including a two-dimensional material and a device including the superlattice structure. The superlattice structure may include at least two different two-dimensional (2D) materials bonded to each other in a lateral direction, and an interfacial region of the at least two 2D materials may be strained. The superlattice structure may have a bandgap adjusted by the interfacial region that is strained. The at least two 2D materials may include first and second 2D materials. The first 2D material may have a first bandgap in an intrinsic state thereof. The second 2D material may have a second bandgap in an intrinsic state thereof. An interfacial region of the first and second 2D materials and an adjacent region may have a third bandgap between the first bandgap and the second bandgap.