The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Nov. 26, 2018
Applicant:
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
Inventors:
Yuanlin Yuan, Jiangsu, CN;
Wei Liu, Jiangsu, CN;
Zhendong Mao, Jiangsu, CN;
Lei Liu, Jiangsu, CN;
Rui Wang, Jiangsu, CN;
Yi Gong, Jiangsu, CN;
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD, Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/73 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/0615 (2013.01); H01L 29/0696 (2013.01);
Abstract
Disclosed is a semiconductor power device, including a semiconductor substrate; a MOSFET region formed on the semiconductor substrate, where the MOSFET region includes at least one MOSFET unit; and at least one collector region located in the semiconductor substrate, where the collector region and the MOSFET unit form an insulated gate bipolar transistor.