The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Sep. 13, 2019
Abb Power Grids Switzerland Ag, Baden, CH;
ABB Power Grids Switzerland AG, Baden, CH;
Abstract
An insulated gate power semiconductor device (), comprises in an order from a first main side () towards a second main side () opposite to the first main side () a first conductivity type source layer (), a second conductivity type base layer (), a first conductivity type enhancement layer () and a first conductivity type drift layer (). The insulated gate power semiconductor device () further comprises two neighbouring trench gate electrodes () to form a vertical MOS cell sandwiched between the two neighbouring trench gate electrodes (). At least a portion of a second conductivity type protection layer () is arranged in an area between the two neighbouring trench gate electrodes (), wherein the protection layer () is separated from the gate insulating layer () by a first conductivity type channel layer () extending along the gate insulating layer ().