The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Dec. 03, 2019
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Yu-Chieh Chou, New Taipei, TW;
Hsin-Chih Lin, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor device includes and an active region and a peripheral region. The peripheral region includes a seal region. The semiconductor device includes a substrate and a seed layer one the substrate. The semiconductor device also includes a GaN-containing composite layer on the seed layer, and the GaN-containing composite layer is disposed in the active region and the peripheral region. The semiconductor device also includes a gate electrode, a source electrode and a drain electrode disposed on the GaN-containing composite layer within the active region. The source electrode and the drain electrode are disposed at two opposite sides of the gate electrode. The semiconductor device further includes a sealing structure, and the sealing structure includes a barrier structure and a seal component in the seal region. The barrier structure is disposed around the active region. The barrier structure penetrates the GaN-containing composite layer and the seed layer.