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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11189626 B1

PDFFull Text
Date of Patent:
Nov. 30, 2021

Filed:

Sep. 13, 2019

Partially disposed gate layer into the trenches

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Xiang-Zheng Bo, Plano, TX (US);

John H. MacPeak, Garland, TX (US);

Douglas T. Grider, McKinney, TX (US);

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Jacqueline J. Garner

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Nicholas J Tobergte

Int. Cl.
CPC ...
H01L 27/11521 (2017.01); H01L 29/788 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01); H01L 29/10 (2006.01); H01L 21/66 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 27/02 (2006.01); H01L 21/28 (2006.01); H01L 21/265 (2006.01); G01N 21/95 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 22/20 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01); H01L 29/1083 (2013.01); H01L 29/40114 (2019.08); H01L 29/42328 (2013.01); H01L 29/4916 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); G01B 2210/56 (2013.01); G01N 21/9501 (2013.01); G03F 7/70625 (2013.01); H01L 21/26513 (2013.01); H01L 22/12 (2013.01);
Abstract

In accordance with some examples, a system comprises a substrate layer having an outer surface. The system also comprises a plurality of trenches extending from the outer surface into the substrate layer. The system then comprises a plurality of active regions with each active region positioned between a different pair of consecutive trenches of the plurality of trenches. The system also comprises a dielectric layer disposed in each of the plurality of trenches and on each of the plurality of active regions. The system then comprises a gate layer disposed on the dielectric layer and extending at least partially into each of the plurality of trenches.

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