The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Jul. 22, 2020
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Jae Taek Kim, Icheon-si, KR;

Hye Yeong Jung, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/112 (2006.01); H01L 27/24 (2006.01); H01L 27/11556 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11286 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/2454 (2013.01);
Abstract

There are provided a semiconductor memory device and a manufacturing method thereof. The semiconductor memory device includes: a cell source structure; a first stack structure disposed on the cell source structure; a channel structure penetrating the first stack structure, the channel structure being connected to the cell source structure; and a first peripheral transistor including impurity regions. A level of a bottom surface of each of the impurity regions is higher than that of a bottom surface of the cell source structure, and a level of a top surface of each of the impurity regions is lower than that of a top surface of the cell source structure.


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