The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
Apr. 22, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jong-Hyun Choi, Suwon-si, KR;
Seok-Bae Moon, Hwaseong-si, KR;
Jae-Hyuk Choi, Seoul, KR;
Won-Ki Park, Seoul, KR;
Jong-Hwi Seo, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01J 37/3171 (2013.01); H01L 22/20 (2013.01); H01J 2237/24507 (2013.01); H01J 2237/24592 (2013.01); H01L 21/265 (2013.01);
Abstract
A method of inspecting a wafer quality includes injecting ions into a wafer using an ion beam in an ion implantation process, collecting data about the ion beam by using a Faraday cup, extracting first data from the data about the ion beam, extracting a wafer section from the first data, calculating a feature value of a wafer from the wafer section, and evaluating a quality of the wafer by comparing the feature value with a predetermined threshold or range.