The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Mar. 17, 2017
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Kyohei Mizuta, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/146 (2006.01); H01L 21/822 (2006.01); H01L 27/04 (2006.01); H04N 5/355 (2011.01); H04N 5/374 (2011.01); H04N 5/359 (2011.01);
U.S. Cl.
CPC ...
H01L 21/768 (2013.01); H01L 21/822 (2013.01); H01L 27/04 (2013.01); H01L 27/146 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14656 (2013.01); H04N 5/355 (2013.01); H04N 5/3591 (2013.01); H04N 5/374 (2013.01);
Abstract

The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.


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