The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Jan. 03, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chul-Ho Kim, Seoul, KR;

Yool Kang, Yongin-si, KR;

Jaesung Kang, Suwon-si, KR;

Jinphil Choi, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/02282 (2013.01); H01L 21/31144 (2013.01); H01L 21/76808 (2013.01);
Abstract

A method of forming a mask pattern and a method of fabricating a semiconductor device, the method of forming a mask pattern including providing a substrate including a plurality of patterns thereon; forming a mask material solution layer such that the mask material solution layer covers the patterns on the substrate; and applying a liquid material to remove an upper portion of the mask material solution layer, wherein the mask material solution layer includes a fluorine additive concentrated at the upper portion of the mask material solution layer.


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