The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
May. 04, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Benjamin Colombeau, San Jose, CA (US);
Johanes F. Swenberg, Los Gatos, CA (US);
Steven C. H. Hung, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/469 (2006.01); H01L 23/58 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02002 (2013.01); H01L 21/76202 (2013.01); H01L 21/76841 (2013.01);
Abstract
A method of forming an electronic device is disclosed. The method comprises forming a barrier layer on a silicon layer, and depositing a silicon oxide layer on the barrier layer. The formation of the barrier layer on the silicon layer minimizes parasitic oxidation of the underlying silicon layer and minimizes defects in the silicon layer.
Colombeau, Benjamin. (2021). Diffusion barrier layer (U.S. Patent No. 11189479). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11189479
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile