The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Nov. 22, 2019
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventor:

Teruo Takagiwa, Yokohama Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/10 (2006.01); G11C 7/06 (2006.01); G11C 7/10 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G06F 11/10 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1012 (2013.01); G11C 7/06 (2013.01); G11C 7/106 (2013.01); G11C 7/109 (2013.01); G11C 7/1063 (2013.01); G11C 7/1087 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01); G11C 16/3404 (2013.01);
Abstract

A memory system includes a semiconductor memory and a memory controller. The semiconductor memory includes first memory cells, first bit lines connected to the first memory cells, second memory cells, second bit lines connected to the second memory cells, a word line connected to the first and second memory cells, and a driver configured to apply a voltage to the word line. In response to a special read command from the memory controller, the driver sequentially applies, to the word line, first read voltages to read data from the first memory cells, a second read voltage within a voltage range of the first read voltages to read data from the first memory cells, third read voltages to read data from the second memory cells, and a fourth read voltage within a voltage range of the third read voltages to read data from the second memory cells.


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