The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Jun. 26, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Rudy J. Wojtecki, San Jose, CA (US);

Ekmini A. De Silva, Slingerlands, NY (US);

Noel Arellano, Freemont, CA (US);

Noah F. Fine Nathel, Arlington, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/16 (2006.01); G03F 7/09 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); G03F 7/075 (2006.01);
U.S. Cl.
CPC ...
G03F 7/16 (2013.01); G03F 7/0752 (2013.01); G03F 7/092 (2013.01); H01L 21/0276 (2013.01); H01L 21/31144 (2013.01);
Abstract

A patterning method is described that utilizes self-assembled monolayers (SAMs) formed with hydroxamic acid compounds and area selective atomic layer deposition (ALD). In the examples, regions of the SAM exposed to extreme ultraviolet radiation (EUV) become resistant to ALD deposition. Subsequent treatment of the exposed SAM to an ALD process results in selective growth of an ALD film on the non-exposed regions of the SAM, leaving the exposed regions substantially free of ALD material.


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