The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Sep. 10, 2020
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventor:

Jun Taek Park, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/84 (2012.01); G06T 7/00 (2017.01); G03F 7/20 (2006.01); H01L 21/66 (2006.01); G01N 21/95 (2006.01); G01N 21/956 (2006.01); G03F 1/86 (2012.01);
U.S. Cl.
CPC ...
G03F 1/84 (2013.01); G01N 21/9501 (2013.01); G01N 21/956 (2013.01); G03F 1/86 (2013.01); G03F 7/7065 (2013.01); G03F 7/70675 (2013.01); G06T 7/0006 (2013.01); H01L 22/12 (2013.01); G06T 2207/10061 (2013.01); G06T 2207/30148 (2013.01);
Abstract

A method of detecting defects of a photoresist pattern includes generating a scanning electron microscope (SEM) image of a surface of a photoresist pattern and signal intensity data relative to pixel position of the surface of the photoresist pattern. The method also includes setting a lower reference intensity threshold value and an upper reference intensity threshold value used as reference values for detecting defects. The method further includes classifying a pixel position of the signal intensity data having a signal intensity value which is less than the lower reference intensity threshold value or greater than the upper reference intensity threshold value as a defect position.


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