The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Jul. 09, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Michael S. Cox, Gilroy, CA (US);

Monique McIntosh, San Jose, CA (US);

Colin John Dickinson, San Jose, CA (US);

Paul E. Fisher, Los Altos, CA (US);

Yutaka Tanaka, San Jose, CA (US);

Zheng Yuan, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); B01D 53/32 (2006.01); B01D 53/64 (2006.01); B01D 53/70 (2006.01); B01D 53/76 (2006.01); B01J 19/08 (2006.01); H01J 37/32 (2006.01); B01D 53/54 (2006.01);
U.S. Cl.
CPC ...
B01D 53/32 (2013.01); B01D 53/54 (2013.01); B01D 53/64 (2013.01); B01D 53/70 (2013.01); B01D 53/76 (2013.01); B01J 19/088 (2013.01); H01J 37/321 (2013.01); H01J 37/3244 (2013.01); H01J 37/32091 (2013.01); H01J 37/32522 (2013.01); H01J 37/32669 (2013.01); H05H 1/24 (2013.01); H05H 1/473 (2021.05); B01D 2251/00 (2013.01); B01D 2251/10 (2013.01); B01D 2251/102 (2013.01); B01D 2251/104 (2013.01); B01D 2251/108 (2013.01); B01D 2251/20 (2013.01); B01D 2251/202 (2013.01); B01D 2251/204 (2013.01); B01D 2251/208 (2013.01); B01D 2251/2062 (2013.01); B01D 2251/502 (2013.01); B01D 2252/103 (2013.01); B01D 2257/55 (2013.01); B01D 2257/553 (2013.01); B01D 2257/556 (2013.01); B01D 2257/60 (2013.01); B01D 2257/7025 (2013.01); B01D 2257/93 (2013.01); B01D 2258/0216 (2013.01); B01D 2259/818 (2013.01); B01J 2219/0815 (2013.01); B01J 2219/0875 (2013.01); B01J 2219/0894 (2013.01); H01J 2237/002 (2013.01); H01J 2237/335 (2013.01); Y02C 20/20 (2013.01); Y02C 20/30 (2013.01);
Abstract

A plasma abatement process for abating effluent containing compounds from a processing chamber is described. A plasma abatement process takes gaseous foreline effluent from a processing chamber, such as a deposition chamber, and reacts the effluent within a plasma chamber placed in the foreline path. The plasma dissociates the compounds within the effluent, converting the effluent into more benign compounds. Abating reagents may assist in the abating of the compounds. The abatement process may be a volatizing or a condensing abatement process. Representative volatilizing abating reagents include, for example, CH, HO, H, NF, SF, F, HCl, HF, Cl, and HBr. Representative condensing abating reagents include, for example, H, HO, O, N, O, CO, CO, NH, NO, CH, and combinations thereof.


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