The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Dec. 18, 2020
Applicant:

Invensense, Inc., San Jose, CA (US);

Inventor:

Dusan Vecera, Stupava, SK;

Assignee:

INVENSENSE, INC., San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 3/00 (2006.01);
U.S. Cl.
CPC ...
H03M 3/424 (2013.01); H03M 3/462 (2013.01);
Abstract

An analog-to-digital converter (ADC) with split-gate laddered-inverter quantizer is presented herein. The ADC converts, via the split-gate laddered-inverter quantizer, an analog input voltage into a digital output value. The split-gate laddered-inverter quantizer separately couples, during respective phases of a clock signal via respective capacitances, a reference voltage and an input voltage corresponding to the analog input voltage to P-type metal-oxide-semiconductor (PMOS) gates of a PMOS branch of the split-gate laddered-inverter quantizer and N-type metal-oxide-semiconductor (NMOS) gates of an NMOS branch of the split-gate laddered-inverter quantizer to optimize current flow at respective frequencies. Further, the split-gate laddered-inverter quantizer separately biases, during the respective phases of the clock signal, the NMOS gates and the PMOS gates at respective bias voltages to optimize the current flow at the respective frequencies.


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