The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Sep. 03, 2020
Applicant:
Shanghai Hestia Power Inc., Shanghai, CN;
Inventors:
Fu-Jen Hsu, Hsinchu, TW;
Chien-Chung Hung, Hsinchu, TW;
Kuo-Ting Chu, Hsinchu, TW;
Chwan-Ying Lee, Hsinchu, TW;
Assignee:
SHANGHAI HESTIA POWER INC., Shanghai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/162 (2013.01); H01L 29/1608 (2013.01);
Abstract
A silicon carbide power device is controlled by a driver and comprises a gate-to-source voltage and a source voltage, wherein the source voltage decreases according to an increase of the gate-to-source voltage, or the source voltage increases according to a decrease of the gate-to-source voltage. Thus, a spike caused by a change of the gate-to-source voltage is suppressed, thereby suppressing the crosstalk phenomenon of the silicon carbide power device.