The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Jul. 16, 2019
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Minsub Lee, Cheonan-si, KR;

Junbae Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 7/122 (2006.01); H02H 1/00 (2006.01); H03K 17/08 (2006.01); G01R 31/52 (2020.01);
U.S. Cl.
CPC ...
H02H 7/1227 (2013.01); G01R 31/52 (2020.01); H02H 1/0007 (2013.01); H03K 17/08 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01);
Abstract

A gate driver circuit is provided that includes a high-side power transistor; a low-side power transistor coupled to the high-side power transistor, where an output voltage is generated at a load node coupled between the low-side power transistor and the high-side power transistor; a gate driver configured to receive a high-side control signal and a low-side control signal, drive the high-side power transistor based on the high-side control signal, and drive the low-side power transistor based on the low-side control signal; and a short circuit detection circuit configured to monitor for short circuit events at the high-side power transistor and at the low-side power transistor based on the high-side control signal, the low-side control signal, and the output voltage, and, generate a fault signal in response to detecting a short circuit event at either of the high-side power transistor or the low-side power transistor.


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