The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Nov. 07, 2019
Enevate Corporation, Irvine, CA (US);
Ian Browne, Orange, CA (US);
Benjamin Park, Mission Viejo, CA (US);
Jill Renee Pestana, Long Beach, CA (US);
ENEVATE CORPORATION, Irvine, CA (US);
Abstract
Systems and methods for use of silicon with impurities in silicon-dominant anode cells may include a cathode, an electrolyte, and an anode including an active material, where the anode active material includes silicon, and where an impurity level of the silicon may be more than 400 ppm. The impurity level of the silicon is more than 600 ppm. The impurity level may be for elements with an atomic number between 2 and 42. The silicon may have a purity of 99.90% or less. A resistance of the silicon when pressed into a 4 mm thick and 15 mm diameter pellet may be 25 kΩ or less. The active material may include silicon, carbon, and a pyrolyzed polymer on a metal current collector. The metal current collector may include a copper or nickel foil in electrical contact with the active material. The active material may include more than 50% silicon.