The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Mar. 20, 2018
Applicant:

Tcl Technology Group Corporation, Huizhou, CN;

Inventors:

Zhurong Liang, Huizhou, CN;

Weiran Cao, Huizhou, CN;

Jia Liu, Huizhou, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 51/50 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5088 (2013.01); H01L 51/502 (2013.01); H01L 51/56 (2013.01); H01L 2251/558 (2013.01);
Abstract

The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.


Find Patent Forward Citations

Loading…