The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Dec. 11, 2019
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Woo Tae Lee, Seoul, KR;

Beom Seok Lee, Suwon, KR;

Assignee:

SK hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/22 (2006.01); H01L 43/02 (2006.01); H01L 43/12 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 27/224 (2013.01); H01L 27/2409 (2013.01); H01L 43/02 (2013.01); H01L 43/12 (2013.01); H01L 45/1253 (2013.01);
Abstract

A method of manufacturing an electronic device including a semiconductor memory may include forming a first active layer, forming a first electrode material over the first active layer, performing a heat treatment process on the first electrode material and the first active layer, and forming a second electrode material over the heat-treated first electrode material.


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