The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Jun. 15, 2020
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Ga-Young Ha, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 27/108 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/10805 (2013.01); H01L 27/10873 (2013.01); H01L 27/10882 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A method for fabricating an electronic device comprising a semiconductor memory is described. The method comprises forming material layers over a substrate; forming a hard mask pattern over the material layers, the hard mask pattern including an amorphous carbon layer; forming a capping protective layer including a portion on sidewalls of the hard mask pattern; and etching the material layers using the hard mask pattern as an etch barrier.