The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Dec. 03, 2019
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Solar Frontier K.k., Tokyo, JP;

Inventors:

Oki Gunawan, Westwood, NJ (US);

Homare Hiroi, Tokyo, JP;

Jeehwan Kim, Los Angeles, CA (US);

David B. Mitzi, Mahopac, NY (US);

Hiroki Sugimoto, Tokyo, JP;

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/0445 (2014.01); H01L 27/12 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 31/1896 (2013.01); H01L 27/1266 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/022441 (2013.01); H01L 31/022475 (2013.01); H01L 31/0445 (2014.12); H01L 31/1864 (2013.01); H01L 33/0093 (2020.05); Y02E 10/50 (2013.01); Y02P 70/50 (2015.11);
Abstract

A photovoltaic device includes an absorber layer having a back contact formed on the absorber layer, the back contact having an exposed surface free from a substrate. It further includes a top contact formed in contact with a transparent conductive layer opposite the back contact and a stressor layer forming a superstrate on the absorber layer opposite the back contact.


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