The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Jun. 23, 2020
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Chao Li, Beijing, CN;

Jianhua Du, Beijing, CN;

Feng Guan, Beijing, CN;

Yupeng Gao, Beijing, CN;

Zhaohui Qiang, Beijing, CN;

Zhi Wang, Beijing, CN;

Yang Lyu, Beijing, CN;

Chao Luo, Beijing, CN;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/105 (2006.01); H01L 27/12 (2006.01); H01L 31/12 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); H01L 27/1214 (2013.01); H01L 31/12 (2013.01); H01L 31/18 (2013.01);
Abstract

The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.


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