The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Nov. 06, 2019
Applicant:
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01); H01L 29/24 (2006.01); H01L 21/477 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78684 (2013.01); H01L 21/0256 (2013.01); H01L 21/02172 (2013.01); H01L 21/02535 (2013.01); H01L 21/02568 (2013.01); H01L 21/28194 (2013.01); H01L 21/324 (2013.01); H01L 21/477 (2013.01); H01L 29/161 (2013.01); H01L 29/24 (2013.01); H01L 29/247 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78672 (2013.01); H01L 29/78693 (2013.01); H01L 29/78696 (2013.01);
Abstract
Provided is a thin film transistor including a source electrode, a drain electrode, and a channel layer connecting the source electrode and the drain electrode. The channel layer includes a tin-based oxide represented by SnMO, wherein M includes at least one of a non-metal chalcogen element or a halogen element.