The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Jan. 28, 2020
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventor:

Katsumi Satoh, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01); H02M 7/5387 (2007.01); H02P 27/06 (2006.01); H02M 5/458 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 24/05 (2013.01); H01L 29/0619 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/42304 (2013.01); H02M 7/53871 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/73 (2013.01); H01L 29/0696 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/13055 (2013.01); H02M 5/4585 (2013.01); H02P 27/06 (2013.01);
Abstract

A semiconductor device includes: a semiconductor base having a first main surface and a second main surface which are opposite to each other; a first main electrode formed on the first main surface and electrically connected to the semiconductor base; a first control electrode pad formed on the first main surface; a first insulating film interposed between the semiconductor base and the first control electrode pad; a peripheral withstand voltage holding structure formed in a peripheral region surrounding the first main electrode and the first control electrode pad on the first main surface; a second main electrode formed on the second main surface and electrically connected to the semiconductor base; a second control electrode pad formed on the second main surface; and a second insulating film interposed between the semiconductor base and the second control electrode pad, wherein the second control electrode pad is surrounded by the second main electrode.


Find Patent Forward Citations

Satoh, Katsumi. (2021). Semiconductor device and inverter (U.S. Patent No. 11183588). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11183588

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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