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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11183586 B1

PDFFull Text
Date of Patent:
Nov. 23, 2021

Filed:

Dec. 26, 2019

Cascode transistor device

Applicant:

Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;

Inventors:

Jian Yang, Xiamen, CN;

Chih-Hung Yen, Xiamen, CN;

Bin Li, Xiamen, CN;

Assignee:

Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;

Attorney:

Thomas | Horstemeyer, LLP

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Mohammad A Rahman

Int. Cl.
CPC ...
H01L 29/732 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/207 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7325 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 27/0203 (2013.01); H01L 27/0605 (2013.01); H01L 29/0603 (2013.01); H01L 29/0684 (2013.01); H01L 29/207 (2013.01); H01L 29/267 (2013.01);
Abstract

A cascode transistor device includes a semiconductor substrate, and a first and a second compound semiconductor transistors. The first compound semiconductor transistor includes a first n-type doping layer, a first p-type doping layer and a second n-type doping layer sequentially disposed on the semiconductor substrate. The second compound semiconductor transistor includes a third n-type doping layer, a second p-type doping layer and a fourth n-type doping layer sequentially disposed on the second n-type doping layer. Each of these doping layers is formed with an exposed metal contact. The exposed metal contact on the second n-type doping layer is electrically connected to the exposed metal contact on the third n-type doping layer.

Find Patent Forward Citations

Yang, Jian. (2021). Cascode transistor device (U.S. Patent No. 11183586). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11183586

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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