The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Dec. 03, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

In Ho Ro, Gyeonggi-do, KR;

Doowon Kwon, Seongnam-si, KR;

Seokjin Kwon, Seoul, KR;

Jameyung Kim, Seoul, KR;

Jinyoung Kim, Suwon-si, KR;

Sungki Min, Suwon-si, KR;

Kwansik Cho, Hwaseong-si, KR;

Mangeun Cho, Suwon-si, KR;

Ho-Chul Ji, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14636 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01);
Abstract

An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.


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