The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
May. 02, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventor:
Ha Jin Lim, Hwaseong-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 27/146 (2006.01); G02B 1/14 (2015.01); G02B 1/115 (2015.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); G02B 1/115 (2013.01); G02B 1/14 (2015.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14605 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01);
Abstract
An image sensor includes a substrate including a plurality of unit pixels, a stack structure on the substrate, and a grid pattern between ones of the plurality of unit pixels on the stack structure. The grid pattern includes a lower grid pattern and an upper grid pattern on the lower grid pattern, the lower grid pattern including lanthanum oxide (LaO), amorphous silicon (a-Si), or polysilicon (poly-Si) and the upper grid pattern including a conductive material.