The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Aug. 05, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jae-Boong Lee, Yongin-si, KR;
Jae-Ho Park, Suwon-si, KR;
Sang-Hoon Baek, Seoul, KR;
Ji-Su Yu, Seoul, KR;
Seung-Young Lee, Seoul, KR;
Jong-Hoon Jung, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A semiconductor device includes first group active fins and a first diffusion prevention pattern. The first group active fins are spaced apart from each other in a second direction, and each of the first group active fins extends in a first direction different from the second direction on a first region of a substrate including the first region and a second region. The first diffusion prevention pattern extends on the first region of the substrate in the second direction through the first group active fins. The first group active fins include first and second active fins. The first diffusion prevention pattern extends through a central portion of the first active fin in the first direction to divide the first active fin, and extends through and contacts an end of the second active fin in the first direction.