The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Jun. 30, 2017
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Sebastien Petitdidier, La Terrasse, FR;
Nicolas Hotellier, Jarrie, FR;
Raul Andres Bianchi, Myans, FR;
Alexis Farcy, La Ravoire, FR;
Benoît Froment, Grenoble, FR;
Assignee:
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 49/02 (2006.01); H01L 23/498 (2006.01); H01L 23/64 (2006.01); H01L 23/58 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H03K 3/3565 (2006.01);
U.S. Cl.
CPC ...
H01L 23/576 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/481 (2013.01); H01L 23/49855 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/57 (2013.01); H01L 23/573 (2013.01); H01L 23/585 (2013.01); H01L 23/642 (2013.01); H03K 3/3565 (2013.01); H01L 23/293 (2013.01);
Abstract
A semiconductor chip includes at least two insulated vias passing through the chip from the front face to the rear face in which, on the side of the rear face, the vias are connected to one and the same conducting strip and, on the side of the front face, each via is separated from a conducting pad by a layer of a dielectric.