The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Feb. 27, 2020
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventor:

Kengo Furutani, Kanazawa Ishikawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/768 (2006.01); C23C 18/42 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76874 (2013.01); C23C 18/42 (2013.01); H01L 21/02581 (2013.01); H01L 21/76855 (2013.01);
Abstract

A semiconductor device includes a semiconductor part; an electrode selectively provided on the semiconductor part, the electrode being electrically connected to the semiconductor part; and multiple metal layers provided on the electrode. A method of manufacturing the semiconductor device includes selectively forming a first metal layer on the electrode; forming a palladium layer on the first metal layer, the palladium layer covering the first metal layer; forming a second metal layer on the palladium layer, the second metal layer covering the palladium layer; and forming a gold layer directly on the palladium layer by replacing the second metal layer with the gold layer.


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