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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11183412 B1

PDFFull Text
Date of Patent:
Nov. 23, 2021

Filed:

Aug. 14, 2018

Method for joining quartz pieces and quartz electrodes and other devices of joined quartz

Applicant:

Watlow Electric Manufacturing Company, St. Louis, MO (US);

Inventors:

Brent Elliot, Cupertino, CA (US);

Guleid Hussen, San Francisco, CA (US);

Jason Stephens, San Francisco, CA (US);

Michael Parker, Brentwood, CA (US);

Assignee:

WATLOW ELECTRIC MANUFACTURING COMPANY, St. Louis, MO (US);

Attorney:

Burris Law, PLLC

Primary Examiner:

Lauren R Colgan

Int. Cl.
CPC ...
B32B 15/04 (2006.01); H01L 21/683 (2006.01); H01L 21/687 (2006.01); B32B 17/06 (2006.01); B32B 9/00 (2006.01); B32B 9/04 (2006.01); B32B 37/04 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6833 (2013.01); B32B 9/005 (2013.01); B32B 9/041 (2013.01); B32B 15/04 (2013.01); B32B 17/061 (2013.01); B32B 37/04 (2013.01); H01J 37/3255 (2013.01); H01J 37/32577 (2013.01); H01J 37/32715 (2013.01); H01L 21/68757 (2013.01); H01L 21/68785 (2013.01); B32B 2311/24 (2013.01); B32B 2318/00 (2013.01); B32B 2457/00 (2013.01);
Abstract

A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

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