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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11183388 B1

PDFFull Text
Date of Patent:
Nov. 23, 2021

Filed:

Jul. 20, 2020

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Takahiro Tamura, Matsumoto, JP;

Yuichi Onozawa, Matsumoto, JP;

Misaki Takahashi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:

Didarul A Mazumder

Int. Cl.
CPC ...
H01L 21/22 (2006.01); H01L 27/06 (2006.01); H01L 29/32 (2006.01); H01L 29/868 (2006.01); H01L 21/322 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01); H01L 27/07 (2006.01); H01L 29/36 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 21/221 (2013.01); H01L 21/265 (2013.01); H01L 21/322 (2013.01); H01L 27/0664 (2013.01); H01L 27/0727 (2013.01); H01L 29/0638 (2013.01); H01L 29/0696 (2013.01); H01L 29/0834 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/7397 (2013.01); H01L 29/7802 (2013.01); H01L 29/861 (2013.01); H01L 29/868 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.

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