The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Feb. 02, 2018
Applicants:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

National Institute of Advanced Industrial Science and Technology, Tokyo, JP;

National University Corporation Kanazawa University, Kanazawa, JP;

Inventors:

Hitoshi Noguchi, Takasaki, JP;

Toshiharu Makino, Tsukuba, JP;

Masahiko Ogura, Tsukuba, JP;

Hiromitsu Kato, Tsukuba, JP;

Hiroyuki Kawashima, Ikeda, JP;

Satoshi Yamasaki, Tsukuba, JP;

Norio Tokuda, Kanazawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/20 (2006.01); C30B 29/04 (2006.01); H01L 21/00 (2006.01); C30B 25/18 (2006.01); C23C 16/02 (2006.01); C30B 25/10 (2006.01); C23C 16/27 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 25/20 (2013.01); C23C 16/0281 (2013.01); C23C 16/272 (2013.01); C30B 25/105 (2013.01); C30B 25/18 (2013.01); C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/04 (2013.01); H01L 21/00 (2013.01); H01L 21/0242 (2013.01); H01L 21/0243 (2013.01); H01L 21/0262 (2013.01); H01L 21/02433 (2013.01); H01L 21/02444 (2013.01); H01L 21/02491 (2013.01); H01L 21/02499 (2013.01); H01L 21/02502 (2013.01); H01L 21/02516 (2013.01); H01L 21/02527 (2013.01); H01L 21/02634 (2013.01);
Abstract

It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.


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