The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Dec. 18, 2017
Applicant:

Tokai Carbon Korea Co., Ltd., Gyeonggi-do, KR;

Inventor:

Sang Chul Lee, Chungcheong-nam-do, KR;

Assignee:

TOKAI CARBON KOREA CO., LTD., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/01 (2006.01); C23C 28/04 (2006.01); C23C 16/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 28/048 (2013.01); C23C 16/01 (2013.01); C23C 16/325 (2013.01); H01L 21/67069 (2013.01);
Abstract

The present invention relates to a semiconductor manufacturing component for manufacturing a semiconductor device by using a substrate such as a wafer in a dry etching process, and a manufacturing method thereof. The semiconductor manufacturing component comprising a deposition layer covering an interlayer boundary according to the present invention comprises: a base material containing carbon; a first deposition layer formed on the base material; a second deposition layer formed on the first deposition layer; and a third deposition layer formed on the first deposition layer and the second deposition layer, and formed to cover at least one portion of a boundary line between the first deposition layer and the second deposition layer.


Find Patent Forward Citations

Loading…