The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2021

Filed:

May. 13, 2020
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Geza Kurczveil, Palo Alto, CA (US);

Di Liang, Palo Alto, CA (US);

Raymond G. Beausoleil, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/10 (2021.01); H01S 5/065 (2006.01); H01S 5/068 (2006.01); H01S 5/14 (2006.01); H01S 5/02 (2006.01); H01S 5/026 (2006.01); H01S 3/106 (2006.01); H01S 5/34 (2006.01);
U.S. Cl.
CPC ...
H01S 5/1032 (2013.01); H01S 5/068 (2013.01); H01S 5/0651 (2013.01); H01S 5/1071 (2013.01); H01S 5/14 (2013.01); H01S 5/142 (2013.01); H01S 3/106 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/1014 (2013.01); H01S 5/1039 (2013.01); H01S 5/1096 (2013.01); H01S 5/3412 (2013.01);
Abstract

Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.


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