The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
May. 22, 2019
University of Electronic Science and Technology of China, Sichuan, CN;
University of Electronic Science and Technology of China, Sichuan, CN;
Abstract
A low-temperature high-performance thermoelectric material possesses a chemical formula of (AgCu)TeSe, wherein −0.025≤x≤0.075, 0.6≤y≤1.4, 0<z≤0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT)is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of BiTe, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of CuX-based (here, X is S, Se, Te) materials, and lays a foundation for the application of CuX-based materials in the field of low-temperature thermoelectricity.