The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Oct. 23, 2018
Applicant:
Emberion Oy, Espoo, FI;
Inventors:
Sami Kallioinen, Espoo, FI;
Martti Voutilainen, Espoo, FI;
Assignee:
EMBERION OY, Espoo, FI;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 31/0352 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1136 (2013.01); H01L 29/0669 (2013.01); H01L 29/1606 (2013.01); H01L 31/035218 (2013.01); H01L 51/428 (2013.01);
Abstract
A photosensitive field-effect transistor comprising a substrate with a source electrode, a drain electrode and a gate electrode. The transistor comprises a photoactive layer which at least partly covers the gate electrode, and a channel layer which covers the photoactive layer and at least partly covers both the source electrode and the drain electrode. The channel layer comprises a two-dimensional material whose conductivity is modulated by charge carriers transferred from the photoactive layer when electromagnetic radiation is absorbed in the photoactive layer.