The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11177334 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 16, 2021

Filed:

Oct. 10, 2019
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Liang Lin, Beijing, CN;

Yunhai Wan, Beijing, CN;

Zhixiang Zou, Beijing, CN;

Chuan Chen, Beijing, CN;

Wei He, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); G02F 1/135 (2006.01); H01L 29/786 (2006.01); H01L 21/77 (2017.01);
U.S. Cl.
CPC ...
H01L 27/3272 (2013.01); G02F 1/135 (2013.01); H01L 27/1214 (2013.01); H01L 27/1218 (2013.01); H01L 27/1251 (2013.01); H01L 27/1259 (2013.01); H01L 29/786 (2013.01); G02F 1/1351 (2021.01); H01L 2021/775 (2013.01);
Abstract

A display substrate, display panel, and method of fabricating the display substrate. The display substrate includes: a first thin film transistor on a substrate; a second thin film transistor on the substrate and on the same side of the substrate as first thin film transistor; a light blocking structure between the substrate and an active region of first thin film transistor. The light blocking structure is configured to block at least a portion of light incident on the active region of first thin film transistor, such that a ratio of area of an illuminated portion of the active region of first thin film transistor to an area of the active region of first thin film transistor is less than a ratio of area of an illuminated portion of an active region of second thin film transistor to an area of the active region of second thin film transistor.


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