The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Apr. 27, 2018
Fuzhou Boe Optoelectronics Technology Co., Ltd., Fujian, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Xiaowei Liu, Beijing, CN;
Bo Liu, Beijing, CN;
Zhonghao Huang, Beijing, CN;
Chao Fan, Beijing, CN;
Yang Wang, Beijing, CN;
Yabin An, Beijing, CN;
Zheng Liu, Beijing, CN;
FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Fujian, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The present disclosure provides a thin film transistor and a fabrication method thereof, and an array substrate. The thin film transistor formed on a base substrate, the thin film transistor includes: an active layer; a first signal metal layer, provided on a surface of the active layer facing the base substrate; a second signal metal layer, provided on a surface of the active layer facing away from the first signal metal layer, wherein, the active layer includes a conductive channel formation region, and the second signal metal layer does not cover the conductive channel formation region of the active layer.