The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2021

Filed:

Sep. 10, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jae-hyeon Jeon, Seongnam-si, KR;

Se-keun Park, Suwon-si, KR;

Dong-sik Park, Suwon-si, KR;

Seok-ho Shin, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/306 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10823 (2013.01); H01L 21/28114 (2013.01); H01L 21/30604 (2013.01); H01L 27/10814 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 29/0653 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01);
Abstract

Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.


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