The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Nov. 09, 2018
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventor:
Christopher Boguslaw Kocon, Mountain Top, PA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/522 (2006.01); H01L 21/822 (2006.01); H02M 3/158 (2006.01); H01L 29/06 (2006.01); H01L 23/532 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0688 (2013.01); H01L 21/8221 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53257 (2013.01); H01L 29/0696 (2013.01); H01L 29/7816 (2013.01); H02M 3/158 (2013.01);
Abstract
An electronic device includes a MOS transistor with a source and a drain, and a capacitor with a first plate connected directly to the source, and a second plate connected directly to the drain. A method to fabricate an electronic device includes fabricating a MOS transistor on or in a semiconductor structure, and fabricating a capacitor having a first plate connected directly to a source of the MOS transistor, and a second plate connected directly to a drain of the MOS transistor.