The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 2021
Filed:
Mar. 25, 2020
Lapis Semiconductor Co., Ltd., Yokohama, JP;
Hiroyuki Tanaka, Yokohama, JP;
Masahiko Higashi, Yokohama, JP;
LAPIS Semiconductor Co., Ltd., Yokohama, JP;
Abstract
The semiconductor device and the method of fabricating the same includes, on a surface of a semiconductor substrateof a first conductivity type which is P-type or N-type, a diode element using a PN junction including a high-concentration first conductivity type impurity regionof the first conductivity type, a high-concentration second conductivity type impurity regionof a second conductivity type that is a conductivity type opposite to the first conductivity type, and an element isolation regionsandwiched between the high-concentration first conductivity type impurity region and the high-concentration second conductivity type impurity region, and a floating layerof the second conductivity type separated from the high-concentration second conductivity type impurity region below the high-concentration second conductivity type impurity region on the semiconductor substrate.