The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 2021

Filed:

Oct. 14, 2019
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Kun Young Lee, Seoul, KR;

Tae Kyung Kim, Cheongju-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 25/00 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 23/528 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 2224/16112 (2013.01); H01L 2224/16147 (2013.01); H01L 2224/16501 (2013.01); H01L 2224/81026 (2013.01); H01L 2224/8159 (2013.01); H01L 2224/8185 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81539 (2013.01); H01L 2224/81587 (2013.01);
Abstract

The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.


Find Patent Forward Citations

Loading…